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BLA1011-300
Avionics LDMOS transistors
Rev. 02 -- 5 February 2008 Product data sheet
1. Product profile
1.1 General description
300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit; tp = 50 s; = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.5 D (%) 57
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 s and a of 2 %: N Output power = 300 W N Power gain = 16.5 dB (typ) N Efficiency = 57 % (typ) I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for operation in 1030 MHz to 1090 MHz band I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I RF power amplifiers for Avionics applications in the 1030 MHz to 1090 MHz frequency band
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLA1011-300 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT957A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +15 15 +150 200 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Zth(j-h) Thermal characteristics Parameter transient thermal impedance from junction to heatsink Conditions Tcase = 25 C; tp = 50 s; = 2 %; PL = 300 W Typ 0.1 Max 0.15 Unit K/W
BLA1011-300_2
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Product data sheet
Rev. 02 -- 5 February 2008
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NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage Conditions VGS = 0 V; ID = 3.75 mA VDS = 20 V; ID = 375 mA Min 65 5.2 50 Typ 5.6 5.48 63 15 55 Max 6.2 3.3 73 60 80 Unit V V V A A nA S m
gate-source quiescent VDS = 32 V; ID = 150 mA voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance VGS = 0 V; VDS = 32 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 20 V; ID = 24 A VGS = VGS(th) + 6 V; ID =13.5 A
7. Application information
Table 7. Application information Mode of operation: Pulsed RF; tp = 50 s; = 2 %; VDS = 32 V; IDq = 150 mA; Tcase = 25 C; unless otherwise specified. Symbol PL Gp RLin D tr tf Pdroop(pulse) Parameter output power power gain input return loss drain efficiency rise time fall time pulse droop power PL = 300 W PL = 300 W PL = 300 W PL = 300 W PL = 300 W PL = 300 W Conditions Min 300 15 52 Typ 16.5 10 57 30 5 0 Max 50 50 0.2 Unit W dB dB % ns ns dB
BLA1011-300_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
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NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
Typical impedance ZS 4.25 - j3.57 4.24 - j3.56 4.47 - j3.71 ZL 1.27 - j0.33 1.04 - j0.41 0.91 - j0.60
Table 8. f MHz 1030 1060 1090
drain ZL gate ZS
001aag189
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLA1011-300 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 150 mA; PL = 300 W; f = 1030 MHz to 1090 MHz.
001aag190 001aag191
80 D (%) 60
20 Gp (dB) 16
(2) (3) (1)
12 40
(1) (2) (3)
8
20 4
0 0 100 200 300 PL (W) 400
0 0 100 200 300 PL (W) 400
(1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %.
(1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %.
Fig 2. Drain efficiency as functions of load power; typical values
Fig 3. Power gain as a function of load power; typical values
BLA1011-300_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
4 of 11
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
400 PL (W) 300
(3) (1) (2)
001aag192
20 Gp (dB) 18 D
001aag193
70 D (%) 60
Gp 16 50
200 14 40
100 12 30
0 0 2 4 6 8 Pi (W) 10
10 1020
1040
1060
1080 f (MHz)
20 1100
(1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz BLA1011-300 in a wideband circuit; VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %.
VDS = 32 V; IDq = 150 mA; tp = 50 s; = 2 %.
Fig 4. Load power as a function of input power; typical values
Fig 5. Power gain and drain efficiency as functions of frequency; typical values
BLA1011-300_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
5 of 11
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
8. Test information
C5
R1 C10 C6 L1 C7
C8
C9 C12 C11
R2 C2 C1 T1 T2 C3 T3 T4 T5 T6 T7 T8 C4
001aah710
Printed-Circuit Board (PCB): Rogers Duroid 6006; r = 6.2 F/m; height = 0.64 mm. See Table 9 for list of components.
Fig 6. Component layout for common source class-AB pulsed production test circuit Table 9. List of components (see Figure 6) To ensure good power supply of the device, adding an electrolytic capacitor close to the supply connection of the circuit may be required. The actual capacitor value may differ depending on the pulse format, the quality of the power supply and the length of the connecting wires to the power supply. In general a value of 470 F will be sufficient. Component Description C1, C4 C2, C3 C5 C6, C8 C7 C9 C10 C11 C12 L1 R1
BLA1011-300_2
Value
[1] [2] [2] [2] [2] [1]
Remarks
multilayer ceramic chip capacitor 62 pF multilayer ceramic chip capacitor 1.5 pF multilayer ceramic chip capacitor 100 pF multilayer ceramic chip capacitor 62 pF multilayer ceramic chip capacitor 10 pF multilayer ceramic chip capacitor 1.2 nF electrolytic capacitor electrolytic capacitor 47 F; 20 V 47 F; 63 V
multilayer ceramic chip capacitor 47 pF -shaped enameled copper wire d = 1 mm; length = 38 mm SMD resistor 18
[1]
0508 package
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
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NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
Table 9. List of components (see Figure 6) ...continued To ensure good power supply of the device, adding an electrolytic capacitor close to the supply connection of the circuit may be required. The actual capacitor value may differ depending on the pulse format, the quality of the power supply and the length of the connecting wires to the power supply. In general a value of 470 F will be sufficient. Component Description R2 T1 T2 T3 T4 T5 T6 T7 T8
[1] [2]
Value 49.9 -
Remarks (W x L) 5 mm x 9 mm (W x L) 1.25 mm x 7.5 mm (W x L) 15 mm x 11 mm (W x L) 40 mm x 16.8 mm (W x L) 1 mm x 6.25 mm (W x L) 4.95 mm x 3.55 mm (W x L) 9.4 mm x 3 mm (W x L) 12 mm x 2.45 mm
metal film resistor stripline stripline stripline stripline stripline stripline stripline stripline
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality.
BLA1011-300_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
7 of 11
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT957A
D
A F
3
D1
U1 q
1
B C c
L
H
U2
p w1
M
E1 A
M
E
B
M
A
2
b
w2
M
C
M
Q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.67 4.08 b 12.83 12.57 c 0.15 0.10 0.006 0.004 D 22.07 21.62 0.869 0.851 D1 22.04 21.64 0.868 0.852 E 9.53 9.27 0.375 0.365 E1 9.55 9.25 0.376 0.364 F 1.14 0.89 0.045 0.035 H 19.94 18.92 0.785 0.745 L 5.33 4.31 0.210 0.170 P 3.38 3.12 0.133 0.123 Q 1.70 1.45 0.067 0.057 q 27.94 1.100 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.25 0.01
0.184 0.505 0.1605 0.495
OUTLINE VERSION SOT957A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 06-06-29 07-03-01
Fig 7. Package outline SOT957A
BLA1011-300_2 (c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
8 of 11
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
10. Abbreviations
Table 10. Acronym IFF LDMOS LDMOST RF TCAS VSWR Abbreviations Description Identification Friend or Foe Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Traffic Collision Avoidance System Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history Release date 20080205 Data sheet status Product data sheet Change notice Supersedes BLA1011-300_1 Document ID BLA1011-300_2 Modifications: BLA1011-300_1
* *
Section 1.2 "Features" on page 1: added RoHS compliance statement Added Section 8 "Test information" on page 6. Product data sheet -
20070403
BLA1011-300_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
9 of 11
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLA1011-300_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 5 February 2008
10 of 11
NXP Semiconductors
BLA1011-300
Avionics LDMOS transistors
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 February 2008 Document identifier: BLA1011-300_2

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